TI TPS2811DR

TI · Power Management ICs · MPN TPS2811DR

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Specifications

Rise Time14ns
Low Level Delay Time40ns
High Level Delay Time40ns
Fall Time15ns
FeaturesInterleaved conduction protection
Current - Output High(IOH)2A
Load TypeMOSFET
Quiescent Current200nA
Voltage - Supply4V~14V
Operating Temperature-40℃~+125℃
Driven Configuration-
Current - Output Low(IOL)2A

Technical details

2A 4V~14V 2A SOIC-8 Gate Drivers RoHS

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