TI · Power Management ICs · MPN HIP6603CB
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| Rise Time | 20ns |
|---|---|
| Fall Time | 20ns |
| Features | Interleaved conduction protection;Built-in bootstrap diode;Enable shutdown |
| Load Type | MOSFET |
| Operating Temperature | 0℃~+85℃ |
| Voltage - Supply | 5V~12V |
| Driven Configuration | Half-Bridge |
| Current - Output Low(IOL) | - |
5V~12V SOIC-8 Gate Drivers