TI HFA3127MJ/883

TI · Transistors (BJTs) · MPN HFA3127MJ/883

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Specifications

Collector - Emitter Voltage VCEO12V
Pd - Power Dissipation150mW
DC Current Gain40
Operating Temperature-55℃~+125℃
Current - Collector(Ic)-
Transition frequency(fT)8GHz
typeNPN

Technical details

12V 150mW 40 NPN CERDIP-16 Bipolar RF Transistors

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