TI CA3096CM96

TI · Transistors (BJTs) · MPN CA3096CM96

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Specifications

Current - Collector Cutoff40nA
Collector - Emitter Voltage VCEO35V
Pd - Power Dissipation750mW
Emitter-Base Voltage VEBO6V
Transition frequency(fT)335MHz
Vce Saturation(VCE(sat))500mV
typeNPN+PNP
Number3 NPN + 2 PNP
Current - Collector(Ic)50mA
Operating Temperature-55℃~+125℃

Technical details

35V 750mW NPN+PNP 50mA SOIC-16 Bipolar Transistor Arrays RoHS

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