TECH PUBLIC TPBC856S

TECH PUBLIC · Transistors (BJTs) · MPN TPBC856S

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO65V
DC Current Gain475
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW
Configuration-
Number2 PNP
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))-
Operating Temperature-

Technical details

Bipolar (BJT) Transistor NPN 65V 100mA 200mW Surface Mount SOT-363

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