TECH PUBLIC MMBT5551T

TECH PUBLIC · Transistors (BJTs) · MPN MMBT5551T

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO160V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Pd - Power Dissipation200mW
Configuration-
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))200mV
Operating Temperature-55℃~+150℃

Technical details

160V 100 1 NPN NPN 600mA SOT-523 Single Bipolar Transistors RoHS

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