TDSEMIC · Memory ICs · MPN W25Q64DR-TD
No reviews yet — be the first to review TDSEMIC W25Q64DR-TD.
| Voltage - Supply | 2.7V~3.6V |
|---|---|
| Memory Size | 64Mbit |
| Operating temperature | -40℃~+85℃ |
| Program / Erase Cycles | 100,000 cycles |
| Clock Frequency | 120MHz |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection |
| Data Retention - TDR (Year) | 20 Years |
| Block Erase Time(tBE) | 250ms@(64KB) |
| Page Programming Time (Tpp) | 600us |
| Standby Supply Current | 0.7uA |
| Interface | SPI |
FLASH - NOR Memory IC 64Mbit SPI SOP-8-208mil