TDSEMIC BC847B-TD

TDSEMIC · Transistors (BJTs) · MPN BC847B-TD

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
DC Current Gain200
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation200mW
ConfigurationStandalone
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor 45V 100mA 100MHz 200mW Surface Mount SOT-23

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