Taiwan Semiconductor UDZS10B R9G

Taiwan Semiconductor · Zener & TVS Devices · MPN UDZS10B R9G

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Specifications

Tolerance±2%
Pd - Power Dissipation200mW
Operating Junction Temperature Range-55℃~+150℃
Reverse Leakage Current (Ir)180nA@7V
Impedance(Zzt)20Ω
Diode Configuration1 Independent
Zener Voltage(Range)9.77V~10.21V
Zener Voltage(Nom)10V
Impedance(Zzk)150Ω

Technical details

200mW 1 Independent 9.77V~10.21V 10V SOD-323F Single Zener Diodes RoHS

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