Taiwan Semiconductor BZV55C12 L1G

Taiwan Semiconductor · Zener & TVS Devices · MPN BZV55C12 L1G

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Specifications

Tolerance±5%
Pd - Power Dissipation500mW
Operating Junction Temperature Range-65℃~+175℃
Reverse Leakage Current (Ir)100nA@9.1V
Impedance(Zzt)20Ω
Diode Configuration1 Independent
Zener Voltage(Range)11.4V~12.7V
Zener Voltage(Nom)12V
Impedance(Zzk)90Ω

Technical details

500mW 1 Independent 11.4V~12.7V 12V MiniMELF Single Zener Diodes RoHS

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