Taiwan Semiconductor BZT52C8V2-G

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52C8V2-G

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Specifications

Tolerance±5%
Pd - Power Dissipation350mW
Operating Junction Temperature Range-55℃~+150℃
Reverse Leakage Current (Ir)700nA@5V
Impedance(Zzt)15Ω
Diode Configuration1 Independent
Zener Voltage(Range)7.7V~8.7V
Zener Voltage(Nom)8.2V
Impedance(Zzk)80Ω

Technical details

350mW 1 Independent 7.7V~8.7V 8.2V SOD-123 Single Zener Diodes RoHS

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