Taiwan Semiconductor BZT52C75-G

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52C75-G

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Specifications

Tolerance±5%
Pd - Power Dissipation350mW
Operating Junction Temperature Range-55℃~+150℃
Reverse Leakage Current (Ir)100nA@56V
Impedance(Zzt)265Ω
Diode Configuration1 Independent
Zener Voltage(Range)71.3V~78.8V
Zener Voltage(Nom)75V
Impedance(Zzk)1.7kΩ

Technical details

350mW 1 Independent 71.3V~78.8V 75V SOD-123F Single Zener Diodes RoHS

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