Taiwan Semiconductor BZT52C6V8-G RHG

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52C6V8-G RHG

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Specifications

Tolerance±5%
Pd - Power Dissipation350mW
Reverse Leakage Current (Ir)2uA@4V
Impedance(Zzt)15Ω
Diode Configuration1 Independent
Zener Voltage(Range)6.4V~7.2V
Zener Voltage(Nom)6.8V
Impedance(Zzk)80Ω

Technical details

350mW 1 Independent 6.4V~7.2V 6.8V SOD-123 Single Zener Diodes RoHS

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