Taiwan Semiconductor BZT52C62-G

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52C62-G

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Specifications

Pd - Power Dissipation350mW
Operating Junction Temperature Range-55℃~+150℃
Reverse Leakage Current (Ir)100nA@47V
Impedance(Zzt)225Ω
Diode Configuration1 Independent
Zener Voltage(Range)58.9V~65.1V
Zener Voltage(Nom)62V
Impedance(Zzk)1.4kΩ

Technical details

350mW 1 Independent 58.9V~65.1V 62V SOD-123F Single Zener Diodes RoHS

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