Taiwan Semiconductor BZT52C51-G

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52C51-G

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Specifications

Pd - Power Dissipation350mW
Operating Junction Temperature Range-55℃~+150℃
Reverse Leakage Current (Ir)100nA@39V
Impedance(Zzt)180Ω
Diode Configuration1 Independent
Zener Voltage(Range)48.5V~53.6V
Zener Voltage(Nom)51V
Impedance(Zzk)1.3kΩ

Technical details

350mW 1 Independent 48.5V~53.6V 51V SOD-123F Single Zener Diodes RoHS

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