Taiwan Semiconductor BZT52C3V9-G RHG

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52C3V9-G RHG

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Specifications

Tolerance±5%
Pd - Power Dissipation350mW
Reverse Leakage Current (Ir)3uA@1V
Impedance(Zzt)90Ω
Diode Configuration1 Independent
Zener Voltage(Range)3.7V~4.1V
Zener Voltage(Nom)3.9V
Impedance(Zzk)600Ω

Technical details

350mW 1 Independent 3.7V~4.1V 3.9V SOD-123 Single Zener Diodes RoHS

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