Taiwan Semiconductor BZT52C18-G RHG

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52C18-G RHG

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Specifications

Tolerance±5%
Pd - Power Dissipation350mW
Reverse Leakage Current (Ir)100nA@12.6V
Impedance(Zzt)45Ω
Diode Configuration1 Independent
Zener Voltage(Range)16.8V~19.2V
Zener Voltage(Nom)18V
Impedance(Zzk)225Ω

Technical details

350mW 1 Independent 16.8V~19.2V 18V SOD-123 Single Zener Diodes RoHS

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