Taiwan Semiconductor BZT52C13-G

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52C13-G

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Specifications

Tolerance±5%
Pd - Power Dissipation350mW
Operating Junction Temperature Range-55℃~+150℃
Reverse Leakage Current (Ir)100nA@8V
Impedance(Zzt)30Ω
Diode Configuration1 Independent
Zener Voltage(Range)12.4V~14.1V
Zener Voltage(Nom)13V
Impedance(Zzk)170Ω

Technical details

350mW 1 Independent 12.4V~14.1V 13V SOD-123 Single Zener Diodes RoHS

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