Taiwan Semiconductor BZT52C12S RRG

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52C12S RRG

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Specifications

Tolerance±5%
Pd - Power Dissipation200mW
Operating Junction Temperature Range-65℃~+150℃
Reverse Leakage Current (Ir)90nA@8V
Impedance(Zzt)25Ω
Diode Configuration1 Independent
Zener Voltage(Range)11.4V~12.6V
Zener Voltage(Nom)12V
Impedance(Zzk)141Ω

Technical details

200mW 1 Independent 11.4V~12.6V 12V SOD-323F Single Zener Diodes RoHS

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