Taiwan Semiconductor BZT52C12-G RHG

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52C12-G RHG

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Specifications

Tolerance±5%
Pd - Power Dissipation350mW
Reverse Leakage Current (Ir)100nA@8V
Impedance(Zzt)25Ω
Diode Configuration1 Independent
Zener Voltage(Range)11.4V~12.7V
Zener Voltage(Nom)12V
Impedance(Zzk)150Ω

Technical details

350mW 1 Independent 11.4V~12.7V 12V SOD-123 Single Zener Diodes RoHS

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