Taiwan Semiconductor BZT52B75-G

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52B75-G

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Specifications

Tolerance±2%
Pd - Power Dissipation410mW
Operating Junction Temperature Range-55℃~+150℃
Reverse Leakage Current (Ir)45nA@52.5V
Impedance(Zzt)255Ω
Diode Configuration1 Independent
Zener Voltage(Range)73.5V~76.5V
Zener Voltage(Nom)75V
Impedance(Zzk)470Ω

Technical details

410mW 1 Independent 73.5V~76.5V 75V SOD-123F Single Zener Diodes RoHS

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