Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52B6V8-G
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| Tolerance | ±2% |
|---|---|
| Pd - Power Dissipation | 410mW |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Reverse Leakage Current (Ir) | 2uA@4V |
| Impedance(Zzt) | 15Ω |
| Diode Configuration | 1 Independent |
| Zener Voltage(Range) | 6.66V~6.94V |
| Zener Voltage(Nom) | 6.8V |
| Impedance(Zzk) | 80Ω |
410mW 1 Independent 6.66V~6.94V 6.8V SOD-123 Single Zener Diodes RoHS