Taiwan Semiconductor BZT52B6V2S RRG

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52B6V2S RRG

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Specifications

Tolerance±2%
Pd - Power Dissipation200mW
Operating Junction Temperature Range-65℃~+150℃
Reverse Leakage Current (Ir)2.7uA@4V
Impedance(Zzt)10Ω
Diode Configuration1 Independent
Zener Voltage(Range)6.08V~6.32V
Zener Voltage(Nom)6.2V
Impedance(Zzk)141Ω

Technical details

200mW 1 Independent 6.08V~6.32V 6.2V SOD-323F Single Zener Diodes RoHS

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