Taiwan Semiconductor BZT52B68-G

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52B68-G

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Specifications

Tolerance±2%
Pd - Power Dissipation410mW
Operating Junction Temperature Range-55℃~+150℃
Reverse Leakage Current (Ir)45nA@47.6V
Impedance(Zzt)240Ω
Diode Configuration1 Independent
Zener Voltage(Range)66.64V~69.36V
Zener Voltage(Nom)68V
Impedance(Zzk)447Ω

Technical details

410mW 1 Independent 66.64V~69.36V 68V SOD-123F Single Zener Diodes RoHS

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