Taiwan Semiconductor BZT52B62-G

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52B62-G

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Specifications

Tolerance±2%
Pd - Power Dissipation410mW
Operating Junction Temperature Range-55℃~+150℃
Reverse Leakage Current (Ir)45nA@43.4V
Impedance(Zzt)215Ω
Diode Configuration1 Independent
Zener Voltage(Range)60.76V~63.24V
Zener Voltage(Nom)62V
Impedance(Zzk)423Ω

Technical details

410mW 1 Independent 60.76V~63.24V 62V SOD-123F Single Zener Diodes RoHS

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