Taiwan Semiconductor BZT52B51-G

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52B51-G

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Specifications

Tolerance±2%
Pd - Power Dissipation410mW
Operating Junction Temperature Range-55℃~+150℃
Reverse Leakage Current (Ir)45nA@35.7V
Impedance(Zzt)100Ω
Diode Configuration1 Independent
Zener Voltage(Range)49.98V~52.02V
Zener Voltage(Nom)51V
Impedance(Zzk)750Ω

Technical details

410mW 1 Independent 49.98V~52.02V 51V SOD-123F Single Zener Diodes RoHS

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