Taiwan Semiconductor BZT52B4V7-G

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52B4V7-G

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Specifications

Tolerance±2%
Pd - Power Dissipation410mW
Operating Junction Temperature Range-55℃~+150℃
Reverse Leakage Current (Ir)3uA@2V
Impedance(Zzt)80Ω
Diode Configuration1 Independent
Zener Voltage(Range)4.61V~4.79V
Zener Voltage(Nom)4.7V
Impedance(Zzk)500Ω

Technical details

410mW 1 Independent 4.61V~4.79V 4.7V SOD-123 Single Zener Diodes RoHS

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