Taiwan Semiconductor BZT52B4V3-G RHG

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52B4V3-G RHG

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Specifications

Tolerance±2%
Pd - Power Dissipation410mW
Operating Junction Temperature Range-55℃~+150℃
Reverse Leakage Current (Ir)3uA@1V
Impedance(Zzt)90Ω
Diode Configuration1 Independent
Zener Voltage(Range)4.21V~4.39V
Zener Voltage(Nom)4.3V
Impedance(Zzk)600Ω

Technical details

410mW 1 Independent 4.21V~4.39V 4.3V SOD-123 Single Zener Diodes RoHS

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