Taiwan Semiconductor BZT52B3V9S RRG

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52B3V9S RRG

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Specifications

Pd - Power Dissipation200mW
Operating Junction Temperature Range-65℃~+150℃
Reverse Leakage Current (Ir)2.7uA
Impedance(Zzt)90Ω
Diode Configuration1 Independent
Zener Voltage(Range)3.82V~3.98V
Zener Voltage(Nom)3.9V

Technical details

Zener Diode 3.9V 200mW Surface Mount SOD-323F

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