Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52B3V9-G RHG
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| Pd - Power Dissipation | 410mW |
|---|---|
| Operating Junction Temperature Range | -55℃~+150℃ |
| Reverse Leakage Current (Ir) | 3uA@1V |
| Impedance(Zzt) | 90Ω |
| Diode Configuration | 1 Independent |
| Zener Voltage(Range) | 3.82V~3.98V |
| Zener Voltage(Nom) | 3.9V |
| Impedance(Zzk) | 600Ω |
Zener Diode Independent 3.9V 410mW Surface Mount SOD-123