Taiwan Semiconductor BZT52B39-G RHG

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52B39-G RHG

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Specifications

Tolerance±2%
Pd - Power Dissipation410mW
Operating Junction Temperature Range-55℃~+150℃
Reverse Leakage Current (Ir)100nA@27.3V
Impedance(Zzt)130Ω
Diode Configuration1 Independent
Zener Voltage(Range)38.22V~39.78V
Zener Voltage(Nom)39V
Impedance(Zzk)350Ω

Technical details

410mW 1 Independent 38.22V~39.78V 39V SOD-123 Single Zener Diodes RoHS

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