Taiwan Semiconductor BZT52B36-G

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52B36-G

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Specifications

Tolerance±2%
Pd - Power Dissipation410mW
Operating Junction Temperature Range-55℃~+150℃
Reverse Leakage Current (Ir)100nA@25.2V
Impedance(Zzt)90Ω
Diode Configuration1 Independent
Zener Voltage(Range)35.28V~36.72V
Zener Voltage(Nom)36V
Impedance(Zzk)350Ω

Technical details

410mW 1 Independent 35.28V~36.72V 36V SOD-123 Single Zener Diodes RoHS

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