Taiwan Semiconductor BZT52B30S R9G

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52B30S R9G

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Specifications

Tolerance±2%
Pd - Power Dissipation200mW
Operating Junction Temperature Range-65℃~+150℃
Reverse Leakage Current (Ir)45nA@21V
Impedance(Zzt)80Ω
Diode Configuration1 Independent
Zener Voltage(Range)29.4V~30.6V
Zener Voltage(Nom)30V
Impedance(Zzk)282Ω

Technical details

200mW 1 Independent 29.4V~30.6V 30V SOD-323F Single Zener Diodes RoHS

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