Taiwan Semiconductor BZT52B2V4-G

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52B2V4-G

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Specifications

Tolerance±2%
Pd - Power Dissipation410mW
Operating Junction Temperature Range-55℃~+150℃
Reverse Leakage Current (Ir)50uA@1V
Impedance(Zzt)100Ω
Diode Configuration1 Independent
Zener Voltage(Range)2.35V~2.45V
Zener Voltage(Nom)2.4V
Impedance(Zzk)600Ω

Technical details

410mW 1 Independent 2.35V~2.45V 2.4V SOD-123 Single Zener Diodes RoHS

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