Taiwan Semiconductor BZT52B27S RRG

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52B27S RRG

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Specifications

Pd - Power Dissipation200mW
Reverse Leakage Current (Ir)45nA@18.9V
Impedance(Zzt)80Ω
Diode Configuration1 Independent
Zener Voltage(Range)26.46V~27.54V
Zener Voltage(Nom)27V

Technical details

200mW 1 Independent 26.46V~27.54V 27V SOD-323F Single Zener Diodes RoHS

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