Taiwan Semiconductor BZT52B27S R9G

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52B27S R9G

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Specifications

Tolerance±2%
Pd - Power Dissipation200mW
Operating Junction Temperature Range-65℃~+150℃
Reverse Leakage Current (Ir)45nA@18.9V
Impedance(Zzt)80Ω
Diode Configuration1 Independent
Zener Voltage(Range)26.46V~27.54V
Zener Voltage(Nom)27V
Impedance(Zzk)282Ω

Technical details

200mW 1 Independent 26.46V~27.54V 27V SOD-323F Single Zener Diodes RoHS

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