Taiwan Semiconductor BZT52B22-G RHG

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52B22-G RHG

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Specifications

Tolerance±2%
Pd - Power Dissipation410mW
Operating Junction Temperature Range-55℃~+150℃
Reverse Leakage Current (Ir)100nA@15.4V
Impedance(Zzt)55Ω
Diode Configuration1 Independent
Zener Voltage(Range)21.56V~22.44V
Zener Voltage(Nom)22V
Impedance(Zzk)250Ω

Technical details

410mW 1 Independent 21.56V~22.44V 22V SOD-123 Single Zener Diodes RoHS

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