Taiwan Semiconductor BZT52B16S RRG

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52B16S RRG

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Specifications

Pd - Power Dissipation200mW
Reverse Leakage Current (Ir)45nA@11.2V
Impedance(Zzt)40Ω
Diode Configuration1 Independent
Zener Voltage(Range)15.68V~16.32V
Zener Voltage(Nom)16V

Technical details

200mW 1 Independent 15.68V~16.32V 16V SOD-323F Single Zener Diodes RoHS

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