Taiwan Semiconductor BZT52B16-G

Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52B16-G

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Specifications

Tolerance±2%
Pd - Power Dissipation410mW
Operating Junction Temperature Range-55℃~+150℃
Reverse Leakage Current (Ir)100nA@11.2V
Impedance(Zzt)40Ω
Diode Configuration1 Independent
Zener Voltage(Range)15.68V~16.32V
Zener Voltage(Nom)16V
Impedance(Zzk)200Ω

Technical details

410mW 1 Independent 15.68V~16.32V 16V SOD-123 Single Zener Diodes RoHS

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