Taiwan Semiconductor · Zener & TVS Devices · MPN BZT52B10-G RHG
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| Tolerance | ±2% |
|---|---|
| Pd - Power Dissipation | 410mW |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Reverse Leakage Current (Ir) | 200nA@7V |
| Impedance(Zzt) | 20Ω |
| Diode Configuration | 1 Independent |
| Zener Voltage(Range) | 9.8V~10.2V |
| Zener Voltage(Nom) | 10V |
| Impedance(Zzk) | 150Ω |
410mW 1 Independent 9.8V~10.2V 10V SOD-123 Single Zener Diodes RoHS