Taiwan Semiconductor BZS55C18 RAG

Taiwan Semiconductor · Zener & TVS Devices · MPN BZS55C18 RAG

No reviews yet — be the first to review Taiwan Semiconductor BZS55C18 RAG.

Specifications

Pd - Power Dissipation500mW
Operating Junction Temperature Range-55℃~+150℃
Reverse Leakage Current (Ir)100nA
Impedance(Zzt)50Ω
Diode Configuration1 Independent
Zener Voltage(Range)17.1V~18.9V
Zener Voltage(Nom)18V
Impedance(Zzk)170Ω

Technical details

500mW 1 Independent 17.1V~18.9V 18V 1206 Single Zener Diodes RoHS

Related Zener & TVS Devices