Taiwan Semiconductor BZD27C200P R3G

Taiwan Semiconductor · Zener & TVS Devices · MPN BZD27C200P R3G

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Specifications

Pd - Power Dissipation1W
Operating Junction Temperature Range-55℃~+175℃
Reverse Leakage Current (Ir)1uA@150V
Impedance(Zzt)750Ω
Diode Configuration1 Independent
Zener Voltage(Range)188V~212V
Zener Voltage(Nom)200V

Technical details

1W 1 Independent 188V~212V 200V Sub-SMA Single Zener Diodes RoHS

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