Taiwan Semiconductor BZD17C39P R3G

Taiwan Semiconductor · Zener & TVS Devices · MPN BZD17C39P R3G

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Specifications

Pd - Power Dissipation800mW
Operating Junction Temperature Range-55℃~+175℃
Reverse Leakage Current (Ir)1uA@30V
Impedance(Zzt)40Ω
Diode Configuration1 Independent
Zener Voltage(Range)37V~41V
Zener Voltage(Nom)39V

Technical details

800mW 1 Independent 37V~41V 39V SMA Single Zener Diodes RoHS

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