Taiwan Semiconductor BZD17C12P RUG

Taiwan Semiconductor · Zener & TVS Devices · MPN BZD17C12P RUG

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Specifications

Pd - Power Dissipation800mW
Operating Junction Temperature Range-55℃~+175℃
Reverse Leakage Current (Ir)3uA@9.1V
Impedance(Zzt)
Diode Configuration1 Independent
Zener Voltage(Range)11.4V~12.7V
Zener Voltage(Nom)12V

Technical details

800mW 1 Independent 11.4V~12.7V 12V SMA Single Zener Diodes RoHS

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