Taiwan Semiconductor · Zener & TVS Devices · MPN BZD17C11P R3G
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| Pd - Power Dissipation | 800mW |
|---|---|
| Operating Junction Temperature Range | -55℃~+175℃ |
| Reverse Leakage Current (Ir) | 4uA@8.2V |
| Impedance(Zzt) | 7Ω |
| Diode Configuration | 1 Independent |
| Zener Voltage(Range) | 10.4V~11.6V |
| Zener Voltage(Nom) | 11V |
800mW 1 Independent 10.4V~11.6V 11V SMA Single Zener Diodes RoHS