ST STN0214

ST · Transistors (BJTs) · MPN STN0214

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Specifications

Current - Collector Cutoff10uA
Collector - Emitter Voltage VCEO1.2kV
Emitter-Base Voltage VEBO6V
DC Current Gain20
Pd - Power Dissipation1.6W
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))100mV

Technical details

Bipolar (BJT) Transistor NPN 1200V 200mA 1.6W Surface Mount SOT-223

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