ST · Memory ICs · MPN NAND512W3A2BN6F
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| Voltage - Supply | 2.7V~3.6V |
|---|---|
| Memory Size | 512Mbit |
| Operating temperature | -25℃~+85℃ |
| Program / Erase Cycles | 100,000 cycles |
| Clock Frequency | - |
| Features | Copy back write function;Hardware write protection function;Bad block management function;ECC error correction function… |
| Data Retention - TDR (Year) | - |
| Block Erase Time(tBE) | - |
| Write Cycle Time(tWC) | - |
| Page Programming Time (Tpp) | - |
| Interface | - |
| Standby Supply Current | 5uA |
2.7V~3.6V 512Mbit TSOP-48 Memory (ICs) RoHS