ST · Memory ICs · MPN NAND512R3A3AZA6E
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| Voltage - Supply | 1.7V~1.95V |
|---|---|
| Memory Size | 512Mbit |
| Operating temperature | - |
| Program / Erase Cycles | 100,000 cycles |
| Clock Frequency | - |
| Features | Copy back write function;Bad block management function;Hardware write protection function;Software reset function;ECC e… |
| Data Retention - TDR (Year) | - |
| Block Erase Time(tBE) | 2ms |
| Page Programming Time (Tpp) | 200us |
| Write Cycle Time(tWC) | - |
| Interface | - |
| Standby Supply Current | 10uA |
1.7V~1.95V 512Mbit FBGA-55(8x10) Memory (ICs) RoHS