ST NAND512R3A2AZA6E

ST · Memory ICs · MPN NAND512R3A2AZA6E

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Specifications

Voltage - Supply-
Memory Size512Mbit
Operating temperature-
Program / Erase Cycles100,000 cycles
Clock Frequency-
FeaturesCopy back write function;Hardware write protection function;Software reset function;Bad block management function;ECC e…
Data Retention - TDR (Year)-
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)-
Interface-
Standby Supply Current-

Technical details

512Mbit FBGA-55(8x10) Memory (ICs)

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