ST · Memory ICs · MPN NAND256W4A0AN6E
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| Memory Size | 256Mbit |
|---|---|
| Voltage - Supply | 2.7V~3.6V |
| Operating temperature | - |
| Program / Erase Cycles | 100,000 cycles |
| Clock Frequency | - |
| Features | Copy back write function;Hardware write protection function;Bad block management function;ECC error correction function… |
| Data Retention - TDR (Year) | - |
| Block Erase Time(tBE) | 2ms |
| Page Programming Time (Tpp) | 200us |
| Write Cycle Time(tWC) | - |
| Standby Supply Current | 100uA |
| Interface | - |
256Mbit 2.7V~3.6V TSOP-48 Memory (ICs) RoHS